j.iiu ^zmi-l-onauctoi l/^ioauati, line. cx t/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227*6005 fax: (973) 376-8960 silicon pnp power transistor 2SB1642 description ? collector-emitter breakdown voltage- : v(br)ceo= -60v(min) ? collector power dissipation- : pc= 25 w@ tc= 25'c ? low collector saturation voltage- : vce(satf -1.5v(max)@ (lc= -2.5a, ib= -0.25a) applications ? designed for audio frequency power amplifier applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ta=25"c collector power dissipation @tc=25c junction temperature storage temperature value -60 -60 -7 -4 -1 2 25 150 -55-150 unit v v v a a w c ?c 1 ?w p,n 1 2 3 2 < 3 1.base 2. collector 3.bwitter to-220f package b - - c - r^'t7;i9 ?* 'r '(??*?:' ??] - - d - n - h -r- k j - - dim a b c d f h j k l n q r s u i. ? ? , ? u mm win 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 max 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 - ??. '-:' ! ' . ? j i a i | ^_^-.j . nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time ofgoing to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB1642 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo vce(sat) vbe(oh) icbo iebo hpe-1 hfe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions lc=-10ma;lb=0 lc= -2.5a; ib= -0.25a lc= -0.5a ; vce= -5v vcs= -60v ; ie= 0 veb= -7v; lc= 0 lc= -0.5a ; vce= -5v lc=-3a;vce=-5v le=0;vcb=-10v;ftest=1mhz lc= -0.5a ; vce= -5v min -60 100 20 typ. 50 9 max -1.5 -1.0 -10 -10 320 unit v v v na via pf mhz
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